On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

Multiple Nanowire Gate Field Effect Transistors

Novel metal oxide semiconductor field effect transistor (MOSFET) architectures aimed at sub IV operation with enhanced current driving capability are reported. In our design, the planar channel region in a conventional MOSFET is replaced by an array of isolated Si wires. Directional metal coverage of the two sidewalls and the top surface of each Si wire help achieve enhanced gate control. Sub I...

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors

In this paper, we introduce the different modes of operation achievable with Three-Independent-Gate Field-Effect Transistors (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) the dynamic control of the threshold voltage; and (iii) the dynamic control of the subthreshold slope.

High performance In2O3 nanowire transistors using organic gate nanodielectrics

Gate coupling and charge distribution in nanowire field effect transistors.

We have modeled the field and space charge distributions in back-gate and top-gate nanowire field effect transistors by solving the three-dimensional Poisson's equation numerically. It is found that the geometry of the gate oxide, the semiconductivity of the nanowire, and the finite length of the device profoundly affect both the total amount and the spatial distribution of induced charges in t...

Contribution (Oral) The interplay of self-heating and unintentional dopants on the operation of nanowire transistors

The ultimate goal in transistor scaling is to successfully fabricate (with acceptable yield) structures with ever smaller dimensions to be able to put more functions on a chip. At the end of the roadmap (more than Moore scenario), amongst other devices, nanowire transistors are speculated to replace conventional MOSFET devices. In fact, the 22 nm technology node is based on FinFET technology. S...